IRF1404ZPBF_15 Datasheet, PDF (2/12 Pages) International Rectifier – Advanced Process Technology

IRF1404Z/S/LPbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Δ V_(BR)DSS/Δ T_J
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
40 ––– ––– V VGS = 0V, ID = 250μA
e ^{––– 0.033 ––– V/°C Reference to 25°C, ID = 1mA}
––– 2.7 3.7 ^mΩ VGS = 10V, ID = 75A **
2.0 ––– 4.0 V VDS = VGS, ID = 150μA
170 ––– ––– V VDS = 25V, ID = 75A**
––– ––– 20 μA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 40V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
––– 100 150
ID = 75A**
–––
–––
31
42
–––
–––
e nC VDS = 32V
VGS = 10V
––– 18 –––
VDD = 20V
––– 110 –––
ID = 75A**
–––
–––
36
58
–––
–––
e ns RG = 3.0 Ω
VGS = 10V
––– 4.5 –––
Between lead,
LS
Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
Ci s s
Cos s
Crs s
Cos s
Cos s
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 4340 –––
––– 1030 –––
––– 550 –––
––– 3300 –––
––– 920 –––
––– 1350 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
f ^{VGS = 0V, VDS = 32V, ƒ = 1.0MHz}
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
I_S
Parameter
Continuous Source Current
l ^{Min. Typ. Max. Units}
Conditions
––– ––– ¹²⁰
MOSFET symbol
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
––– ––– 750
A showing the
integral reverse
––– ––– 1.3
––– 28 42
––– 34 51
e ^{p-n junction diode.}
V T_J = 25°C, I_S = 75A**,V_GS = 0V
e ^{ns TJ = 25°C, IF = 75A**, VDD = 20V}
nC di/dt = 100A/μs
Intrins icturn-ontimeis negligible(turn-onis dominatedbyLS+LD)
2
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