IRF1404ZPBF_15 Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Process Technology

Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
PD - 96040C
IRF1404ZPbF
IRF1404ZSPbF
IRF1404ZLPbF
HEXFET^® Power MOSFET
D
V_(BR)DSS
40V
R_DS(on) typ.
2.7mΩ
max. 3.7mΩ
G
l I_{D (Silicon Limited)} 180A
S
I_{D (Package Limited)} 120A
TO-220AB
D²Pak
TO-262
IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, VGS @ 10V (S ilicon Limited)
Continuous Drain Current, VGS @ 10V
™ ^{Continuous Drain Current, VGS @ 10V (P ackageLimited)}
Pulsed Drain Current
Power Dissipation
V_GS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR
T_J
T_STG
Linear Derating Factor
d ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θCS
RθJA
R_θJA
Junction-to-Case
i Case-to-Sink, Flat Greased Surface
i Junction-to-Ambient
j Junction-to-Ambient (PCB Mount)
Max.
l 180
l 120
l 120
710
200
1.3
± 20
330
480
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
k ^Max.
0.75
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
www.irf.com
1
06/19/12