AUIRLS4030 Datasheet, PDF (2/13 Pages) International Rectifier – HEXFETPower MOSFET

AUIRLS/SL4030
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV_(BR)DSS/ΔT_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
gfs
I_DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100
–––
–––
–––
–––
0.10
3.4
3.6
–––
–––
4.3
4.5
V V_GS = 0V, I_D = 250μA
™ V/°C Reference to 25°C, I_D = 5mA
f _mΩ V_GS = 10V, I_D = 110A
f V_GS = 4.5V, I_D = 92A
1.0 ––– 2.5 V V_DS = V_GS, I_D = 250μA
320 ––– ––– S V_DS = 25V, I_D = 110A
––– ––– 20
––– ––– 250
μA
V_DS = 100V, V_GS = 0V
V_DS = 100V, V_GS = 0V, T_J = 125°C
–––
–––
––– 100
––– -100
nA
V_GS = 16V
V_GS = -16V
R_G(int)
Internal Gate Resistance
––– 2.1 ––– Ω
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Q_gs
Q_gd
Q_sync
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss eff. (ER)
C_oss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q_g - Q_gd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
––– 87 130
––– 27 –––
––– 45 –––
––– 42 –––
––– 74 –––
––– 330 –––
––– 110 –––
––– 170 –––
––– 11360 –––
––– 670 –––
––– 290 –––
––– 760 –––
––– 1140 –––
I_D = 110A
f ^nC
V_DS = 50V
V_GS = 4.5V
I_D = 110A, V_DS =0V, V_GS = 4.5V
V_DD = 65V
ns
I_D = 110A
f ^{RG = 2.7Ω}
V_GS = 4.5V
V_GS = 0V
V_DS = 50V
pF
ƒ = 1.0MHz
h V_GS = 0V, V_DS = 0V to 80V
g V_GS = 0V, V_DS = 0V to 80V
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Ù ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 180
––– ––– 730
––– ––– 1.3
––– 50 –––
––– 60 –––
––– 88 –––
––– 130 –––
MOSFET symbol
D
showing the
A
integral reverse
G
f ^{p-n junction diode.}
S
V T_J = 25°C, I_S = 110A, V_GS = 0V
ns
T_J = 25°C
T_J = 125°C
nC
T_J = 25°C
T_J = 125°C
V_R = 85V,
f ^{IF = 110A}
di/dt = 100A/μs
––– 3.3 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.05mH, R_G = 25Ω,
I_AS = 110A, V_GS =10V. Part not recommended for use above
this value .
ƒ I_SD ≤ 110A, di/dt ≤ 1330A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
… C_oss eff. (TR) is a fixed capacitance that gives the same
charging time as C_oss while V_DS is rising from 0 to 80% V_DSS
† C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ Rθ is measured at TJ approximately 90°C.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
‰ R_θJC value shown is at time zero.
www.irf.com