AUIRLS4030 Datasheet, PDF (1/13 Pages) International Rectifier – HEXFETPower MOSFET

AUTOMOTIVE GRADE
PD - 96406B
AUIRLS4030
Features
l Optimized for Logic Level Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
AUIRLSL4030
HEXFET^® Power MOSFET
D _VDSS
100V
R_DS(on) typ. _3.4mΩ
G
max. 4.3mΩ
S ^I_D
180A
S
GD
D²Pak
AUIRLS4030
S
D
G
TO-262
AUIRLSL4030
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A)
is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
d ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy (Thermally limited)
c Avalanche Current
c Repetitive Avalanche Energy
e Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
R_θJC
ik Junction-to-Case
R_θJA
j Junction-to-Ambient (PCB Mount) , D²Pak
Max.
180
130
730
370
2.5
± 16
305
See Fig. 14, 15, 22a, 22b,
21
-55 to + 175
300
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/17/11