AUIRLR2703 Datasheet, PDF (2/12 Pages) International Rectifier – Advanced Planar Technology

AUIRLR2703
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
gfs
I_DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
30 ––– ––– V VGS = 0V, ID = 250µA
–––
–––
–––
0.030 –––
––– 0.045
––– 0.065
V/°C Reference to 25°C, ID = 1mA
f V_GS = 10V, I_D = 14A
f Ω V_GS = 4.5V, I_D = 12A
1.0 ––– –––
6.4 ––– –––
i ^{V VDS = VGS, ID = 250µA}
S VDS = 25V, ID = 14A
––– ––– 25 µA VDS = 30V, VGS = 0V
––– ––– 250
V_DS = 24V, V_GS = 0V, T_J = 150°C
––– ––– 100 nA VGS = 16V
––– ––– -100
V_GS = -16V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– ––– 15
I_D = 14A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– –––
––– –––
4.6
9.3
fi nC VDS = 24V
V_GS = 4.5V
t_d(on)
Turn-On Delay Time
––– 8.5 –––
V_DD = 15V
t_r
Rise Time
––– 140 –––
I_D = 14A
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
–––
–––
12
20
–––
–––
fi ns RG = 12Ω
V_GS = 4.5V, R_D = 1.1Ω
L_D
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
nH 6mm (0.25in.)
L_S
Internal Source Inductance
––– 7.5 –––
G
from package
g and center of die contact
S
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Diode Characteristics
––– 450 –––
––– 210 –––
––– 110 –––
V_GS = 0V
i ^{VDS = 25V}
pF ƒ = 1.0MHz
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
Min.
–––
–––
–––
Typ.
–––
–––
–––
Max. Units
Conditions
23g
MOSFET symbol
D
A showing the
G
96
integral reverse
p-n junction diode.
S
f 1.3 V T_J = 25°C, I_S = 14A, V_GS = 0V
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
––– 65 97 ns T_J = 25°C, I_F = 14A
fi ––– 140 210 nC di/dt = 100A/µs
t_on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ V_DD = 15V, starting T_J = 25°C, L =570µH
R_G = 25Ω, I_AS = 14A. (See Figure 12)
ƒ I_SD ≤ 14A, di/dt ≤ 140A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C.
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
… Caculated continuous current based on maximum allowable
junction temperature. Package limitation current = 20A.
† This is applied for I-PAK, L_S of D-PAK is measured
between lead and center of die contact.
‡ Uses IRL2703 data and test conditions.
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