AUIRLR2703 Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Planar Technology

AUTOMOTIVE GRADE
PD - 97620
AUIRLR2703
• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
G
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
HEXFET^® Power MOSFET
D
V_(BR)DSS
30V
R_DS(on) max.
45mΩ
I_{D (Silicon Limited)}
S
I_{D (Package Limited)}
23A
20A
D
S
G
D-Pak
AUIRLR2703
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
23
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
16
A
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
20
I_DM
™ Pulsed Drain Current
96
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
45
W
0.30
W/°C
V_GS
E_AS
E_AS (tested )
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
™ Repetitive Avalanche Energy
e Peak Diode Recovery
± 16
V
77
mJ
200
14
A
4.5
mJ
5.0
V/ns
T_J
Operating Junction and
-55 to + 175
T_STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
300
Thermal Resistance
Parameter
R_θJC
R_θJA
j Junction-to-Case
i Junction-to-Ambient (PCB mount)
R_θJA
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/11/2011