AUIRLL2705 Datasheet, PDF (2/12 Pages) International Rectifier – Advanced Planar Technology

AUIRLL2705
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
V_(BR)DSS/T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
55 ––– –––
V V_GS = 0V, I_D = 250μA
–––
–––
–––
–––
0.061 –––
––– 0.040
––– 0.051
––– 0.065
V/°C

Reference to 25°C, I_D = 1mA
f V_GS = 10V, I_D = 3.8A
f V_GS = 5.0V, I_D = 3.8A
f V_GS = 4.0V, I_D = 1.9A
1.0 ––– 2.0
V V_DS = V_GS, I_D = 250μA
gfs
Forward Transconductance
5.1 ––– –––
S V_DS = 25V, I_D = 1.9A
I_DSS
Drain-to-Source Leakage Current
––– ––– 25
μA V_DS = 55V, V_GS = 0V
––– ––– 250
V_DS = 44V, V_GS = 0V, T_J = 150°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA V_GS = 16V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -16V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– 32 48
I_D = 3.8A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– 3.5 5.3
––– 9.7 14
f nC VDS = 44V
V_GS = 10V, See Fig. 6 and 9
t_d(on)
Turn-On Delay Time
––– 6.2 –––
V_DD = 28V
t_r
Rise Time
––– 12 ––– ns I_D = 3.8A
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
––– 35 –––
––– 22 –––
f ^{RG = 6.2}
R_D = 7.1See Fig. 10
C_iss
Input Capacitance
––– 870 –––
V_GS = 0V
C_oss
Output Capacitance
––– 220 ––– pF V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 92 –––
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– 0.91
MOSFET symbol
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
––– ––– 30
A showing the
integral reverse
––– ––– 1.3
––– 58 88
––– 140 210
f ^{p-n junction diode.}
V T_J = 25°C, I_S = 3.8A, V_GS = 0V
f ^{ns TJ = 25°C, IF = 3.8A}
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
‚ V_DD = 25V, starting T_J = 25°C, L = 15mH
R_G = 25, I_AS = 3.8A. (See Figure 12)
ƒ I_SD  3.8A, di/dt  220A/µs, V_DD  V_(BR)DSS,
T_J  150°C .
„ Pulse width 300µs; duty cycle 2%.
… When mounted on FR-4 board using minimum recommended
footprint.
† When mounted on 1 inch square copper board, for comparison
with other SMD devices.
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