AUIRLL2705 Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Planar Technology

PD- 97756
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide
variety of other applications.
AUIRLL2705
HEXFET^® Power MOSFET
D _V(BR)DSS
R_DS(on) max.
S _ID
55V
0.04
3.8A
G
Gate
D
S
D
G
SOT-223
AUIRLL2705
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_A = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 25°C
Parameter
h Continuous Drain Current, V_GS @ 10V
g Continuous Drain Current, V_GS @ 10V
g Continuous Drain Current, V_GS @ 10V
™ Pulsed Drain Current
h Power Dissipation (PCB Mount)
g Power Dissipation (PCB Mount)
g Linear Derating Factor (PCB Mount)
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
Ù Avalanche Current
™g Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
Parameter
R_JA
g Junction-to-Ambient (PCB mount, steady state)
R_JA
h Junction-to-Ambient (PCB mount, steady state)
Max.
5.2
3.8
3.0
30
2.1
1.0
8.3
± 16
110
3.8
0.10
7.5
-55 to + 150
Units
A
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Typ.
93
48
Max.
120
60
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/23/12