AUIRLB3036 Datasheet, PDF (2/11 Pages) International Rectifier – Ultra Low On-Resistance

AUIRLB3036
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV_(BR)DSS/ΔT_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
60 ––– ––– V V_GS = 0V, I_D = 250μA
–––
–––
–––
0.061
1.9
2.2
–––
2.4
2.8
V/°C Reference to 25°C, I_D = 5mA
gg _mΩ
V_GS = 10V, I_D = 165A
V_GS = 4.5V, I_D = 140A
1.0 ––– 2.5 V V_DS = V_GS, I_D = 250μA
340 ––– ––– S V_DS = 10V, I_D = 165A
R_G(int)
I_DSS
Internal Gate Resistance
Drain-to-Source Leakage Current
––– 2.0 ––– Ω
––– ––– 20
––– ––– 250 ^μA
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100 ^nA
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_DS = 60V, V_GS = 0V
V_DS = 60V, V_GS = 0V, T_J = 125°C
V_GS = 16V
V_GS = -16V
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Q_gs
Q_gd
Q_sync
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss eff. (ER)
C_oss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q_g - Q_gd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
––– 91 140
––– 31 –––
––– 51 –––
––– 40 –––
––– 66 –––
––– 220 –––
––– 110 –––
––– 110 –––
––– 11210 –––
––– 1020 –––
––– 500 –––
––– 1430 –––
––– 1880 –––
I_D = 165A
g ^nC
V_DS = 30V
V_GS = 4.5V
I_D = 165A, V_DS =0V, V_GS = 4.5V
V_DD = 39V
ns
I_D = 165A
g ^{RG = 2.1Ω}
V_GS = 4.5V
V_GS = 0V
V_DS = 50V
pF
ƒ = 1.0MHz
i V_GS = 0V, V_DS = 0V to 48V
h V_GS = 0V, V_DS = 0V to 48V
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
(Body Diode)
I_SM
Ãe ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
™ ––– –––
270
MOSFET symbol
D
showing the
A
––– –––
integral reverse
G
1100
––– ––– 1.3
g ^{p-n junction diode.}
S
V T_J = 25°C, I_S = 165A, V_GS = 0V
–––
–––
62
66
–––
–––
ns
T_J = 25°C
T_J = 125°C
–––
–––
310
360
–––
–––
nC
T_J = 25°C
T_J = 125°C
V_R = 51V,
g ^{IF = 165A}
di/dt = 100A/μs
––– 4.4 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.021mH
R_G = 25Ω, I_AS = 165A, V_GS =10V. Part not recommended for use
above this value .
„ I_SD ≤ 165A, di/dt ≤ 430A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
… Pulse width ≤ 400μs; duty cycle ≤ 2%.
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time as
C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
‰ R_θ is measured at T_J approximately 90°C.
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April 08, 2014