AUIRLB3036 Datasheet, PDF (1/11 Pages) International Rectifier – Ultra Low On-Resistance

AUTOMOTIVE GRADE
AUIRLB3036
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Logic Level Gate Drive
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET^® Power MOSFET
D _VDSS
60V
R_DS(on) typ.
1.9mΩ
G
max.
I_{D (Silicon Limited)}
c ^2.4mΩ
270A
S
I_{D (Package Limited)}
195A
D
Description
Specifically designed for Automotive applications, this HEXFET^® Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design
are a 175°C junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
G
Gate
S
D
G
TO-220AB
AUIRLB3036
D
Drain
S
Source
Base Part Number
AUIRLB3036
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
AUIRLB3036
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Max.
c 270
190
195
1100
380
Units
A
W
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
e Single Pulse Avalanche Energy (Thermally Limited)
d Avalanche Current
d Repetitive Avalanche Energy
f Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
2.5
±16
290
See Fig. 14, 15, 22a, 22b
8.0
-55 to + 175
300
x x 10lbf in (1.1N m)
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
Parameter
k Junction-to-Case
Case-to-Sink, Flat, Greased Surface
j Junction-to-Ambient (PCB Mount)
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2014 International Rectifier
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April 08, 2014