AUIRL7732S2 Datasheet, PDF (2/11 Pages) International Rectifier – DirectFETPower MOSFET

AUIRL7732S2TR/TR1
Static Characteristics @ T_J = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
V_GS(th)
ΔV_GS(th)/ΔT_J
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
40
––– –––
V V_GS = 0V, I_D = 250μA
–––
–––
–––
0.03
5.0
7.5
–––
6.6
10.5
V/°C
ii _mΩ
Reference to 25°C, I_D = 1mA
V_GS = 10V, I_D = 35A
V_GS = 4.5V, I_D = 29A
1.0
–––
1.8
-7.1
2.5
–––
V
mV/°C ^{VDS = VGS, ID = 50μA}
64
––– –––
S VDS = 10V, ID = 35A
R_G
Gate Resistance
––– 0.64 ––– Ω
I_DSS
Drain-to-Source Leakage Current
––– –––
5
μA VDS = 40V, VGS = 0V
––– ––– 250
V_DS = 40V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100
nA ^{VGS = 16V}
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -16V
Dynamic Characteristics @ T_J = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– 22
33
V_DS = 20V
Q_gs1
Pre-Vth Gate-to-Source Charge
Q_gs2
Post-Vth Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
––– 3.3 –––
V_GS = 4.5V
––– 2.8 ––– nC ID = 35A
––– 13 –––
See Fig.11
Q_godr
Gate Charge Overdrive
––– 2.9 –––
Q_sw
Q_oss
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Switch Charge (Q_gs2 + Q_gd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 15.8 –––
––– 13 –––
––– 21 –––
––– 123 –––
––– 22 –––
––– 37 –––
––– ₂₀₂₀ –––
––– ₄₁₀ –––
––– ₂₁₀ –––
––– ₁₄₆₀ –––
––– ₃₆₅ –––
––– ₆₃₀ –––
Ãi nC VDS = 16V, VGS = 0V
V_DD = 20V, V_GS = 4.5V
ns I_D = 35A
R_G = 6.8Ω
V_GS = 0V
V_DS = 25V
pF ƒ = 1.0MHz
V_GS = 0V, V_DS = 1.0V, f=1.0MHz
V_GS = 0V, V_DS = 32V, f=1.0MHz
V_GS = 0V, V_DS = 0V to 32V
Diode Characteristics @ T_J = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
(Body Diode)
––– ––– 58
MOSFET symbol
D
A showing the
I_SM
Ãg ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
integral reverse
G
––– ––– 230
––– ––– 1.3
i ^{p-n junction diode.}
V IS = 35A, VGS = 0V
S
––– 23
––– 16
35
24
i ^{ns IF = 35A, VDD = 20V}
nC di/dt = 100A/μs
ƒ Surface mounted on 1 in. square Cu
(still air).
Notes  through Š are on page 11
2
‰ Mounted to a PCB with small
clip heatsink (still air)
‰ Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
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