AUIRL7732S2 Datasheet, PDF (1/11 Pages) International Rectifier – DirectFETPower MOSFET

AUTOMOTIVE GRADE
• Logic Level
• Advanced Process Technology
• Optimized for Automotive DC-DC, Motor Drive and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS and Halogen free
D
PD - 97635A
AUIRL7732S2TR
AUIRL7732S2TR1
DirectFET^® Power MOSFET ‚
V_(BR)DSS
40V
R_DS(on) typ.
5.0mΩ
max.
6.6mΩ
I_{D (Silicon Limited)}
58A
Q_g
22nC
S
G
D
S
Applicable DirectFET Outline and Substrate Outline 
SC
DirectFET™ ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRL7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^® packaging to achieve
low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile.
The DirectFET^® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET^®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET^® packaging
platform coupled with the latest silicon technology allows the AUIRL7732S2 to offer substantial system level savings and performance improvement
specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The AUIRL7732S2 can be utilized
together with the AUIRL7736M2 as a control/sync MOSFET pair in a buck converter topology. This MOSFET utilizes the latest processing techniques
to achieve low on-resistance and low Qg per silicon area . Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive
applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_DM
P_D @T_C = 25°C
P_D @T_A = 25°C
E_AS
E_AS (tested)
I_AR
E_AR
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
e Continuous Drain Current, V_GS @ 10V (Silicon Limited)
i Pulsed Drain Current
f Power Dissipation
e Power Dissipation
h Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ãg Avalanche Current
g Repetitive Avalanche Energy
T_P
Peak Soldering Temperature
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
40
V
± 16
58
41
14
A
230
41
2.2
W
46
124
mJ
See Fig. 18a,18b,16,17
A
mJ
260
-55 to + 175
°C
R_θJA
R_θJA
R_θJA
R_θJCan
Parameter
e Junction-to-Ambient
j Junction-to-Ambient
k Junction-to-Ambient
fl Junction-to-Can
Typ.
–––
12.5
20
–––
Max.
67
–––
–––
3.7
Units
°C/W
R_θJ-PCB
Junction-to-PCB Mounted
f Linear Derating Factor
1.0
–––
0.27
W/°C
HEXFET^® is a registered trademark of International Rectifier.
www.irf.com
1
04/07/11