AUIRFS8408 Datasheet, PDF (2/13 Pages) International Rectifier – NEW ULTRA LOW ON-RESISTANCE

AUIRFS/SL8408
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
Qsync
Total Gate Charge Sync. (Qg - Qgd)
td(on)
Turn-On Delay Time
tr
Rise Time
td(of f )
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss eff. (ER)
Effective Output Capacitance (Energy Related)
Coss eff. (TR)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
c (Body Diode)
VSD
dv/dt
Diode Forward Voltage
f Peak Diode Recovery
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min. Typ.
40
–––
––– 0.032
–––
1.3
2.2
3.0
––– –––
––– –––
––– –––
––– –––
–––
2.1
Max.
–––
–––
1.6
3.9
1.0
150
100
-100
–––
Units
Conditions
d ^{V VGS = 0V, ID = 250μA}
V/°C Reference to 25°C, ID = 5mA
mΩ VGS = 10V, ID = 100A
V VDS = VGS, ID = 250μA
μA ^{VDS = 40V, VGS = 0V}
VDS = 40V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Ω
Min. Typ. Max. Units
Conditions
211 –––
–––
S VDS = 10V, ID = 100A
––– 216
324
ID = 100A
–––
51
–––
77
–––
–––
g nC VDS =20V
VGS = 10V
––– 139
–––
ID = 100A, VDS =0V, VGS = 10V
–––
29
–––
VDD = 26V
––– 202
––– 108
––– 119
–––
–––
–––
ns
ID = 100A
g ^{RG = 2.4Ω}
VGS = 10V
––– 10820 –––
VGS = 0V
––– 1540 –––
VDS = 25V
––– 1140
––– 1880
––– 2208
–––
–––
–––
pF
ƒ = 1.0 MHz, See Fig. 5
h V_GS = 0V, V_DS =0V to 32V See Fig. 11
i V_GS = 0V, V_DS = 0V to 32V
Min. Typ. Max. Units
Conditions
–––
–––
317c
MOSFET symbol
D
A ^{showing the}
–––
–––
l 1270
integral reverse
G
–––
0.9
1.3
g ^{p-n junction diode.}
S
V TJ = 25°C, IS = 100A, VGS = 0V
–––
5.0
––– V/ns TJ = 175°C, IS = 100A, VDS = 40V
–––
38
–––
37
–––
–––
ns
TJ = 25°C
TJ = 125°C
VR = 34V,
IF = 100A
–––
50
–––
50
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/μs
–––
1.9
–––
A TJ = 25°C
Notes:
 Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 195A by source
bonding technology . Note that current limitations arising from
heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.099mH, R_G = 50Ω,
I_AS = 100A, V_GS =10V. Part not recommended for use above
this value.
„ I_SD ≤ 100A, di/dt ≤ 1307A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
‰ R_θ is measured at T_J approximately 90°C.
Š Pulse drain current is limited by source bonding technology.
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April 25, 2013