AUIRFS8408 Datasheet, PDF (1/13 Pages) International Rectifier – NEW ULTRA LOW ON-RESISTANCE

AUTOMOTIVE GRADE
AUIRFS8408
AUIRFSL8408
Features
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of other G
applications.
Applications
l Electric Power Steering (EPS)
l Battery Switch
l Start/Stop Micro Hybrid
l Heavy Loads
l SMPS
D
S
G
Gate
HEXFET^® Power MOSFET
V_DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
40V
1.3mΩ
1.6mΩ
c 317A
195A
D
D
S
G
D²Pak
AUIRFS8408
S
D
G
TO-262
AUIRFSL8408
D
Drain
S
Source
Ordering Information
Base part number Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRFSL8408
TO-262
Tube
50
AUIRFS8408
D²Pak
Tube
50
AUIRFSL8408
AUIRFS8408
Tape and Reel Left
800
AUIRFS8408TRL
Tape and Reel Right
800
AUIRFS8408TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
ID @ TC = 25°C
IDM
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
™ ^Max.
317
™ 224
195
l 1270
Units
A
P_D @T_C = 25°C Maximum Power Dissipation
294
W
Linear Derating Factor
1.96
W/°C
V_GS
Gate-to-Source Voltage
± 20
V
T_J
Operating Junction and
-55 to + 175
T_{ST G}
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Avalanche Characteristics
e _{EAS (Thermally limited)} Single Pulse Avalanche Energy
Ãe EAS (tested)
d _IAR
d _EAR
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
R_θJA
k^Parameter
Junction-to-Case
j Junction-to-Ambient (PCB Mount)
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
490
800
See Fig. 14, 15, 24a, 24b
Typ.
–––
–––
Max.
0.51
40
mJ
A
mJ
Units
°C/W
1 www.irf.com © 2013 International Rectifier
April 25, 2013