AUIRFS4010-7P Datasheet, PDF (2/12 Pages) International Rectifier – HEXFETPower MOSFET

AUIRFS4010-7P
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV_(BR)DSS/ΔT_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
100
–––
–––
–––
0.11
3.3
–––
–––
4.0
V V_GS = 0V, I_D = 250μA
™ V/°C Reference to 25°C, I_D = 5mA
f _mΩ V_GS = 10V, I_D = 110A
V_GS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250μA
gfs
Forward Transconductance
210 ––– ––– S V_DS = 25V, I_D = 110A
R_G
Internal Gate Resistance
I_DSS
Drain-to-Source Leakage Current
––– 2.1 –––
––– ––– 20
––– ––– 250
Ω
μA
V_DS = 100V, V_GS = 0V
V_DS = 100V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 100
––– -100
nA
V_GS = 20V
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– 150 230
Q_gs
Gate-to-Source Charge
––– 36 –––
Q_gd
Gate-to-Drain ("Miller") Charge
––– 48 –––
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
––– 102 –––
t_d(on)
Turn-On Delay Time
––– 19 –––
t_r
Rise Time
––– 56 –––
t_d(off)
Turn-Off Delay Time
––– 100 –––
t_f
Fall Time
––– 48 –––
C_iss
Input Capacitance
––– 9830 –––
C_oss
Output Capacitance
––– 650 –––
C_rss
Reverse Transfer Capacitance
––– 260 –––
h ^Coss ^{eff. (ER)} Effective Output Capacitance (Energy Related) ––– 730 –––
g ^Coss ^{eff. (TR)} Effective Output Capacitance (Time Related)
––– 740 –––
I_D = 110A
f ^nC
V_DS = 50V
V_GS = 10V
I_D = 110A, V_DS =0V, V_GS = 10V
V_DD = 65V
ns
I_D = 110A
f ^{RG = 2.7Ω}
V_GS = 10V
V_GS = 0V
V_DS = 50V
pF ƒ = 1.0MHz
h V_GS = 0V, V_DS = 0V to 80V
g V_GS = 0V, V_DS = 0V to 80V
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 186
––– ––– 740
––– ––– 1.3
MOSFET symbol
D
showing the
A _{integral reverse}
G
p-n junction diode.
S
f V T_J = 25°C, I_S = 110A, V_GS = 0V
––– 60 –––
––– 67 –––
––– 150 –––
––– 180 –––
ns
T_J = 25°C
T_J = 125°C
nC
T_J = 25°C
T_J = 125°C
V_R = 85V,
f ^{IF = 110A}
di/dt = 100A/μs
––– 4.7 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.052mH
R_G = 25Ω, I_AS = 110A, V_GS =10V. Part not recommended for use
above this value .
ƒ I_SD ≤ 110A, di/dt ≤ 1310A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
… C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
ˆ R_θ is measured at T_J approximately 90°C.
‰ R_θJC value shown is at time zero.
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