AUIRFS4010-7P Datasheet, PDF (1/12 Pages) International Rectifier – HEXFETPower MOSFET

AUTOMOTIVE GRADE
PD - 96397A
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Enhanced dV/dT and dI/dT capability
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRFS4010-7P
HEXFET^® Power MOSFET
D
V_DSS
R_DS(on) typ.
100V
3.3mΩ
G
max. 4.0mΩ
S
I_D
190A
Description
D
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use
in Automotive applications and a wide variety of other
S
SS
S
S
G
D²Pak 7 Pin
AUIRFS4010-7P
applications.
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A)
is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
c Avalanche Current
c Repetitive Avalanche Energy
e Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
190
130
740
380
2.5
± 20
330
See Fig. 14, 15, 22a, 22b
26
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R_θJC
jk Junction-to-Case
R_θJA
i Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/31/11