AUIRFR4292 Datasheet, PDF (2/14 Pages) International Rectifier – Advanced Process Technology

AUIRFR/U4292
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 250 ––– ––– V VGS = 0V, ID = 250μA
 V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient –––
RDS(on)
Static Drain-to-Source On-Resistance –––
0.31
275
–––
345
e ^{V/°C Reference to 25°C, ID = 1.0mA}
m _{VGS = 10V, ID = 5.6A}
VGS(th)
Gate Threshold Voltage
3.0 ––– 5.0
V VDS = VGS, ID = 50μA
gfs
Forward Transconductance
6.2 ––– –––
V VDS = 50V, ID = 5.6A
IDSS
Drain-to-Source Leakage Current
––– ––– 20
μA VDS = 250V, VGS = 0V
––– ––– 250
VDS = 250V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic Electrical @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
––– 13 20
ID = 5.6A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
4.7
4.8
–––
–––
e nC VDS = 125V
VGS = 10V
td(on)
Turn-On Delay Time
––– 11 –––
VDD = 250V
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
––– 15 –––
ID = 5.6A
–––
–––
16
8.4
–––
–––
e ns RG = 15
VGS = 10V
LD
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss
Input Capacitance
––– 705 –––
and center of die contact
S
VGS = 0V
Cos s
Output Capacitance
––– 71 –––
VDS = 25V
Crs s
Reverse Transfer Capacitance
––– 20 ––– pF ƒ = 1.0MHz
Cos s
Output Capacitance
––– 600 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Cos s
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
––– 26 –––
––– 65 –––
f ^{VGS = 0V, VDS = 200V, ƒ = 1.0MHz}
VGS = 0V, VDS = 0V to 200V
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– 9.3
MOSFET symbol
D
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
A showing the
––– ––– 40
integral reverse
G
––– ––– 1.3
e ^{p-n junction diode.}
S
V T_J = 25°C, I_S = 5.6A, V_GS = 0V
–––
–––
110
390
165
585
e ^{ns TJ = 25°C, IF = 5.6A, VDD = 125V}
nC di/dt = 100A/μs
Intrins icturn-on timeis negligible(turn-on is dominatedbyLS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by T_Jmax, starting T_J = 25°C, L = 8.1mH
R_G = 50, I_AS = 5.6A, V_GS =10V. Part not
recommended for use above this value.
ƒ Pulse width  1.0ms; duty cycle  2%.
„ C_oss eff. is a fixed capacitance that gives the
same charging time as C_oss while V_DS is rising
from 0 to 80% V_DSS .
… Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for
typical repetitive avalanche performance.
† This value is determined from sample failure
population, starting T_J = 25°C, L = 8.1mH,
R_G = 50, I_AS = 5.6A, V_GS =10V.
2
‡ When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
ˆ R_ is measured at T_J approximately 90°C.
www.irf.com