AUIRFR4292 Datasheet, PDF (1/14 Pages) International Rectifier – Advanced Process Technology

AUTOMOTIVE GRADE
PD - 97792
AUIRFR4292
Features
● Advanced Process Technology
● Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
G
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
AUIRFU4292
HEXFET^® Power MOSFET
D
V_(BR)DSS
R_DS(on) typ.
max.
S
I_D
250V
275m
345m
9.3A
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
D
S
G
D-Pak
AUIRFR4292
S
D
G
I-Pak
AUIRFU4292
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
™ ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested )
IAR
EAR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
R_JC
j Junction-to-Case
R_JA
i Junction-to-Ambient (PCB Mount)
RJA
Junction-to-Ambient
Max.
9.3
6.6
40
100
0.67
± 20
130
97
See Fig.12a, 12b, 15, 16
-55 to + 175
300
Typ.
–––
–––
–––
Max.
1.5
50
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/18/12