AUIRFR3504Z Datasheet, PDF (2/13 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRFR3504Z
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40 ––– –––
––– 0.032 –––
––– 8.23 9.0
V V_GS = 0V, I_D = 250µA
e ^{V/°C Reference to 25°C, ID = 1mA}
mΩ _{VGS = 10V, ID = 42A}
V_GS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
gfs
Forward Transconductance
32 ––– ––– S V_DS = 10V, I_D = 42A
I_DSS
Drain-to-Source Leakage Current
––– ––– 20 µA V_DS = 40V, V_GS = 0V
––– ––– 250
V_DS = 40V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 200 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– 30 45
I_D = 42A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
9.6
12
–––
–––
e nC VDS = 32V
V_GS = 10V
t_d(on)
Turn-On Delay Time
––– 15 –––
V_DD = 20V
t_r
Rise Time
––– 74 –––
I_D = 42A
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
–––
–––
30
38
–––
–––
e ns RG = 15 Ω
V_GS = 10V
L_D
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
L_S
Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
C_oss
Output Capacitance
C_oss
Output Capacitance
C_oss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
I_S
Continuous Source Current
––– 1510 –––
––– 340 –––
––– 190 –––
––– 1100 –––
––– 340 –––
––– 460 –––
and center of die contact
S
V_GS = 0V
V_DS = 25V
pF ƒ = 1.0MHz
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
f ^{VGS = 0V, VDS = 32V, ƒ = 1.0MHz}
V_GS = 0V, V_DS = 0V to 32V
Min. Typ. Max. Units
Conditions
––– ––– 42
MOSFET symbol
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
––– ––– 310
A showing the
integral reverse
––– ––– 1.3
––– 18 27
––– 9.2 14
e ^{p-n junction diode.}
V T_J = 25°C, I_S = 42A, V_GS = 0V
e ^{ns TJ = 25°C, IF = 42A, VDD = 20V}
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.09mH,
R_G = 25Ω, I_AS = 42A, V_GS =10V. Part not
recommended for use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ C_oss eff. is a fixed capacitance that gives the same
charging time as C_oss while V_DS is rising from 0 to
80% V_DSS .
… Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
† This value determined from sample failure population,
starting T_J = 25°C, L = 0.09mH, R_G = 25Ω, I_AS = 42A, V_GS =10V.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994.
ˆ R_θ is measured at TJ approximately 90°C.
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