AUIRFR3504Z Datasheet, PDF (1/13 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 97492
AUIRFR3504Z
AUTOMOTIVE GRADE
Features
l Advanced Process Technology
l Low On-Resistance
D
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax ^G
l Lead-Free, RoHS Compliant
S
l Automotive Qualified *
HEXFET^® Power MOSFET
V_(BR)DSS
R_DS(on) max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
40V
9.0mΩ
77A
42A
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
G
Gate
D
S
G
D-Pak
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
V_GS
E_AS
E_AS (tested )
I_AR
E_AR
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R_θJC
R_θJA
j Junction-to-Case
Parameter
i Junction-to-Ambient (PCB mount)
R_θJA
Junction-to-Ambient
Max.
77
54
42
310
90
0.60
± 20
77
110
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y 10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
1.66
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
04/12/2010