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| AUIRFI4905 Datasheet, PDF (2/9 Pages) International Rectifier – Advanced Planar Technology | |||
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AUIRFI4905
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
V(BR)DSS
ïV(BR)DSS/ïTJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
-55 âââ âââ
âââ -0.049 âââ
âââ âââ 20
-2.0 âââ -4.0
17 âââ âââ
IDSS
Drain-to-Source Leakage Current
âââ âââ -25
âââ âââ -250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ 100
âââ âââ -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
âââ 110 165
âââ 18 âââ
âââ 51 âââ
âââ 14 âââ
âââ 45 âââ
âââ 71 âââ
âââ 61 âââ
âââ 4.5 âââ
LS
Internal Source Inductance
âââ 7.5 âââ
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
ISM
(Body Diode) ï
VSD
dv/dt
Diode Forward Voltage
Peak Diode Recovery ï
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ 3560 âââ
âââ 1290 âââ
âââ 480 âââ
Min. Typ. Max.
âââ âââ -39
âââ âââ -155
âââ âââ -1.6
âââ 2.8 âââ
âââ 64 âââ
âââ 164 âââ
Units
Conditions
V VGS = 0V, ID = -250µA
V/°C Reference to 25°C, ID = -1.0mA
mïï VGS = -10V, ID = -23A ï
V VDS = VGS, ID = -250µA
S VDS = -10V, ID = -23A
µA
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Units
Conditions
ID = -23A
nC VDS = -44V
VGS = -10V ï
VDD = -55V
ns ID = -23A
RG = 2.7ï
VGS = -10V ï
Between lead,
nH 6mm (0.25in.)
from package
and center of die contact
VGS = 0V
pF VDS = -25V
Æ = 1.0 MHz
Units
Conditions
MOSFET symbol
D
A showing the
integral reverse
G
A p-n junction diode.
S
V TJ = 25°C, IS = -23A, VGS = 0V ï
V/ns TJ = 175°C, IS= -23A, VDS = -55V
ns TJ = 25°C, IF = -23A, VR = -28V
nC di/dt = 100A/µsï
Notes:
ïï Repetitive rating; pulse width limited by max. junction temperature.
ïï Limited by TJmax, starting TJ = 25°C, L = 4.7mH, RG = 50ï, IAS = -23A, VGS =-10V.
ïï ISD ï£ -23A, di/dt ï£ 1026A/µs, VDD ï£ V(BR)DSS, TJ ï£ 150°C.
ïï Pulse width ï£ 400µs; duty cycle ï£ 2%.
ï
ï Rï± is measured at TJ approximately 90°C.
2 www.irf.com © 2013 International Rectifier
September 11, 2013
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