AUIRFI4905 Datasheet, PDF (1/9 Pages) International Rectifier – Advanced Planar Technology

AUTOMOTIVE GRADE
Features
 Advanced Planar Technology
 P-Channel MOSFET
 Low On-Resistance
 Dynamic dV/dT Rating
 175°C Operating Temperature
G
 Fast Switching
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET^® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance
per silicon area. This benefit combined with the fast
switching speed an ruggedized device design that
HEXFET Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
AUIRFI4905
HEXFET^® Power MOSFET
D
V_DSS
-55V
R_DS(on) max.
20m
S
I_{D (Silicon Limited)}
-39A
D
G
Gate
S
D
G
TO-220 Full-Pak
D
Drain
S
Source
Base Part Number
AUIRFI4905
Package Type
TO-220 Full-Pak
Standard Pack
Form
Tube
Quantity
50
Orderable Part Number
AUIRFI4905
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
I_D @ T_{C (Bottom)} = 25°C Continuous Drain Current, V_GS @ -10V (Silicon Limited)
I_D @ T_{C (Bottom)} = 100°C
I_DM
P_D @T_{C (Bottom)} = 25°C
Continuous Drain Current, V_GS @ -10V (Silicon Limited)
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
T_J
T_STG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
Thermal Resistance
R_JC
R_JA
Symbol
Junction-to-Case 
Junction-to-Ambient
Parameter
Max.
-39
-27
-155
55
0.37
± 20
1247
See Fig. 14, 15, 22a, 22b
Units
A
W
W/°C
V
mJ
A
-55 to + 175
°C
Typ.
–––
–––
Max.
2.73
65
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
September 11, 2013