AUIRF7309Q Datasheet, PDF (2/14 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUIRF7309Q
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V_(BR)DSS
Drain-to-Source Breakdown Voltage ^N-Ch
30
–––
P-Ch -30
–––
ΔV_(BR)DSS/ΔT_J
Breakdown Voltage Temp. Coefficient ^N-Ch
P-Ch
–––
–––
0.032
-0.037
R_DS(on)
–––
–––
N-Ch _{–––}
–––
Static Drain-to-Source On-Resistance
–––
–––
P-Ch
–––
–––
V_GS(th)
Gate Threshold Voltage
N-Ch 1.0
–––
P-Ch -1.0
–––
gfs
Forward Transconductance
N-Ch 5.2
–––
P-Ch 2.5
–––
N-Ch –––
–––
I_DSS
Drain-to-Source Leakage Current
P-Ch –––
–––
N-Ch –––
–––
P-Ch –––
–––
I_GSS
Gate-to-Source Forward Leakage
N-P
–––
–––
Gate-to-Source Reverse Leakage
N-P
–––
–––
Max.
–––
–––
–––
–––
0.050
0.080
0.10
0.16
3.0
-3.0
–––
–––
1.0
-1.0
25
-25
-100
100
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Q_g
Total Gate Charge
N-Ch –––
–––
25
P-Ch –––
–––
25
Q_gs
Gate-to-Source Charge
N-Ch –––
–––
2.9
P-Ch –––
–––
2.9
Q_gd
Gate-to-Drain ("Miller") Charge
N-Ch –––
–––
7.9
N-Ch –––
–––
9.0
t_d(on)
Turn-On Delay Time
P-Ch –––
6.8
–––
N-Ch –––
11
–––
t_r
Rise Time
P-Ch –––
21
–––
N-Ch –––
17
–––
t_d(off)
Turn-Off Delay Time
N-Ch –––
22
–––
P-Ch –––
25
–––
t_f
Fall Time
LD
Internal Drain Inductance
N-Ch –––
7.7
–––
P-Ch –––
18
–––
N-P
–––
4.0
–––
L_S
Internal Source Inductance
N-P
–––
6.0
–––
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
N-Ch –––
520
–––
P-Ch –––
440
–––
N-Ch –––
180
–––
P-Ch –––
200
–––
N-Ch –––
72
–––
P-Ch –––
93
–––
N-Ch
Min.
–––
P-Ch –––
Typ.
–––
–––
Max.
1.8
-1.8
Units
V
V/°C
Ω
V
S
μA
nA
Conditions
V_GS = 0V, I_D = 250μA
V_GS = 0V, I_D =-250μA
Reference to 25°C, I_D = 1mA
Reference to 25°C, I_D = -1mA
e V_GS = 10V, I_D = 2.4A
e V_GS = 4.5V, I_D = 2.0A
e V_GS = -10V, I_D = 1.8A
e V_GS = -4.5V, I_D = 1.5A
V_DS = V_GS, I_D = 250μA
V_DS = V_GS, I_D = -250μA
V_DS = 15V, I_D = 2.4A
V_DS = -24V, I_D = -1.8A
V_DS = 24V, V_GS = 0V
V_DS = -24V, V_GS = 0V
V_DS = 24V, V_GS = 0V, T_J = 125°C
V_DS = -24V, V_GS = 0V, T_J = 125°C
V_GS = 20V
V_GS = -20V
Units
Conditions
N-Channel
nC
I_D = 2.6A, V_DS = 16V, V_GS = 4.5V
e
P-Channel
I_D =-2.2A, V_DS =-16V, V_GS =-4.5V
N-Channel
V_DD= 10V, I_D = 2.6A R_G = 6.0Ω
R_D = 3.8Ω
ns
P-Channel
V_DD=-10V, I_D =-2.2A R_G = 6.0Ω
R_D = 4.5Ω
Between lead,
nH 6mm (0.25in.)
from package
and center of die contact
N-Channel
pF
e ^{VGS = 0V, VDS = 15V, ƒ = 1.0MHz}
P-Channel
V_GS = 0V, V_DS = -15V, ƒ = 1.0MHz
Units
Conditions
A
N-Ch –––
–––
16
I_SM
c ^{Pulsed Source Current}
Diode)
(Body
P-Ch –––
–––
-12
V_SD
Diode Forward Voltage
N-Ch –––
–––
1.0
P-Ch –––
–––
-1.0
V
e T_J = 25°C, I_S = 1.8A, V_GS = 0V
e T_J = 25°C, I_S = -1.8A, V_GS = 0V
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
N-Ch –––
47
71
ns N-Channel
P-Ch –––
53
N-Ch –––
56
80
84
nC
e ^{TJ = 25°C,IF =2.6A, di/dt = 100A/μs}
P-Channel
P-Ch –––
66
99
T_J = 25°C,I_F =-2.2A, di/dt = 100A/μs
t_on
Forward Turn-On Time
N-P Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
‚ N-Channel I_SD ≤ 2.4A, di/dt ≤ 73A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C.
P-Channel I_SD ≤ -1.8A, di/dt ≤ 90A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C.
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.
2
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