AUIRF7309Q Datasheet, PDF (1/14 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUTOMOTIVE GRADE
PD - 97655A
Features
l Advanced Planar Technology
l Low On-Resistance
l Dual N and P Channel MOSFET
l Dynamic dV/dT Rating
l 150°C Operating Temperature
l Fast Switching
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUIRF7309Q
HEXFET^® Power MOSFET
N-CHANNEL MOSFET
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
P-CHANNEL MOSFET
Top View
N-CH P-CH
V_(BR)DSS
30V -30V
R_DS(on) max. _{0.05Ω 0.10Ω}
I_D
4.7A -3.5A
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
SO-8
AUIRF7309Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_A = 25°C 10 Sec. Pulsed Drain Current, VGS @ 10V
I_D @ T_A = 25°C Continuous Drain Current, VGS @ 10V
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
f Power Dissipation
f Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
d Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
f Junction-to-Ambient (PCB Mount, steady state)
Max.
N-Channel
P-Channel
4.7
-3.5
4
-3.0
3.2
-2.4
16
-12
1.4
0.011
± 20
6.9
-6.0
-55 to + 150
Typ.
–––
Max.
90
Units
A
W
W/°C
V
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/23/11