AUIRF6215S Datasheet, PDF (2/12 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUIRF6215S
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-150 ––– –––
V VGS = 0V, ID = -250μA
 VDSS/ TJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
–––
-0.20 –––
––– 0.29
––– 0.58
V/°C

Reference to 25°C, ID = -1mA
f V_GS = -10V, I_D = -6.6A
f V_GS = -10V, I_D = -6.6A, T_J=150°C
VGS(th)
Gate Threshold Voltage
-2.0 ––– -4.0
V VDS = VGS, ID = -250μA
gfs
Forward Transconductance
3.6 ––– ––– S VDS = -25V, ID = -6.6A
IDSS
Drain-to-Source Leakage Current
––– ––– -25 μA VDS = -150V, VGS = 0V
––– ––– -250
VDS = -120V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
––– ––– -100 nA VGS = -20V
Gate-to-Source Reverse Leakage
––– ––– 100
VGS = 20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
––– ––– 66
nC ID = -6.6A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– ––– 8.1
––– ––– 35
f ^{VDS = -120V}
VGS = -10V
td(on)
Turn-On Delay Time
––– 14 ––– ns VDD = -75V
tr
Rise Time
––– 36 –––
ID = -6.6A
td(off)
Turn-Off Delay Time
tf
Fall Time
––– 53 –––
––– 37 –––
f ^{RG = 6.8}
RD = 12
LS
Internal Source Inductance
––– 7.5 ––– nH B etween lead,
6mm (0.25in.), from package
& center of die contact
Ciss
Input Capacitance
––– 860 ––– pF VGS = 0V
Cos s
Output Capacitance
––– 220 –––
VDS = -25V
Crs s
Reverse Transfer Capacitance
––– 130 –––
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– -11
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
––– ––– -44
A showing the
integral reverse
––– ––– -1.6
p-n junction diode.
f _V T_J = 25°C, I_S = -6.6A, V_GS = 0V
–––
–––
160
1.2
240
1.7
f ^{ns TJ = 25°C, IF = -6.6A}
μC di/dt = 100A/μs
Intrins icturn-on timeis negligible(turn-on is dominatedbyLS +LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting T_J = 25°C, L = 14mH, R_G = 25,
I_AS = -6.6A. (See Figure 12)
ƒ I_SD  -6.6A, di/dt 620A/µs, V_DD  V_(BR)DSS,
T_J  175°C.
„ Pulse width 300µs; duty cycle 2%.
… When mounted on 1" square PCB (FR-4or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
† R_ is measured at T_J approximately 90°C
2
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March 29, 2013