AUIRF6215S Datasheet, PDF (1/12 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUTOMOTIVE GRADE
AUIRF6215S
Features
l Advanced Planar Technology
l Low On-Resistance
l P-Channel
l Dynamic dV/dT Rating
G
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) max.
S I_D
-150V
0.29
-13A
G
Gate
D
S
D
G
D²Pak
AUIRF6215S
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ TC = 25°C
I_D @ TC = 100°C
I_DM
Continuous Drain Current, VGS @ -10V
c ^{Continuous Drain Current, VGS @ -10V}
Pulsed Drain Current
P_D @TA = 25°C
P_D @TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
V_GS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
c Avalanche Current
c Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
RJC
RJA
h Junction-to-Case
g Junction-to-Ambient (PCB Mount, steady state)
Max.
-13
-9.0
-44
3.8
110
0.71
± 20
310
-6.6
11
-5.0
-55 to + 175
300
Typ.
–––
–––
Max.
1.4
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2013 International Rectifier
March 29, 2013