IRHQ6110 Datasheet, PDF (10/14 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)

IRHQ6110
100
^TOP
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
10
-6.0V
BOTTOM -5.0V
1
-5.0V
Pre-Irradiation
P-Channel
Q2,Q3
100
 ^TOP
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
10
-6.0V
BOTTOM -5.0V
1
-5.0V
0.1
0.01
0.1
 20µs PULSE WIDTH
TJ = 25 ^°C
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 14. Typical Output Characteristics
0.1
0.01
0.1
 20µs PULSE WIDTH
TJ = 150 ^°C
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 15. Typical Output Characteristics
100
 T_J = 25^°C
10
 T_J = 150^°C
1
0.1
5
 V DS = -50V
20µs PULSE WIDTH
7
9
11
13
15
-V_GS , Gate-to-Source Voltage (V)
Fig 16. Typical Transfer Characteristics
10
2.5 _{ ID = -2.3A}
2.0
1.5
1.0
0.5
 V_GS = -12V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 17. Normalized On-Resistance
Vs. Temperature
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