IRHQ6110 Datasheet, PDF (1/14 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)

PD - 91781B
IRHQ6110
RADIATION HARDENED ^{100V, Combination 2N-2P-CHANNEL}
POWER MOSFET
RAD-Hard^™ HEXFET^®
SURFACE MOUNT (LCC-28)
MOSFET TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHQ6110 100K Rads (Si) 0.6Ω
IRHQ63110 300K Rads (Si) 0.6Ω
IRHQ6110 100K Rads (Si) 1.1Ω
IRHQ63110 300K Rads (Si) 1.1Ω
ID
3.0A
3.0A
-2.3A
-2.3A
CHANNEL
N
N
P
P
LCC-28
International Rectifier’s RAD-Hard^TM HEXFET^® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Pre-Irradiation
N-Channel
P-Channel Units
3.0
-2.3
1.9
-1.5
A
12
-9.2
12
12
W
0.1
0.1
W/°C
±20
85 ➁
±20
V
75 ⑦
mJ
3.0
-2.3
A
1.2
3.0 ➂
1.2
9.0 ⑧
mJ
V/ns
-55 to 150
o_C
300 (for 5s)
0.89 (Typical)
g
For footnotes, refer to the last page
www.irf.com
1
03/24/04