JANTX2N6782_15 Datasheet, PDF (1/7 Pages) International Rectifier – Repetitive Avalanche Ratings

PD - 90423C
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS
IRFF110
100V
RDS(on)
.60Ω
ID
3.5A
IRFF110
JANTX2N6782
JANTXV2N6782
REF:MIL-PRF-19500/556
100V, N-CHANNEL
The HEXFET^technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
3.5
2.25
A
14
15
W
0.12
W/°C
±20
V
68
mJ
—
A
—
mJ
5.5
V/ns
-55 to 150
o_C
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
For footnotes refer to the last page
www.irf.com
1
01/22/01