JANSF2N7262 Datasheet, PDF (1/12 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE

PD - 90672E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF7230
JANSR2N7262
200V, N-CHANNEL
REF: MIL-PRF-19500/601
RAD-Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHF7230 100K Rads (Si)
IRHF3230 300K Rads (Si)
IRHF4230 500K Rads (Si)
IRHF8230 1000K Rads (Si)
RDS(on)
0.35Ω
0.35Ω
0.35Ω
0.35Ω
ID
5.5A
5.5A
5.5A
5.5A
QPL Part Number
JANSR2N7262
JANSF2N7262
JANSG2N7262
JANSH2N7262
International Rectifier’s RAD-Hard^TM HEXFET^®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
5.5
3.5
A
22
25
W
0.2
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
±20
240
5.5
2.5
5.0
-55 to 150
V
mJ
A
mJ
V/ns
o_C
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
05/15/06