IRHY57133CMSE_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD - 94318C
IRHY57133CMSE
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
JANSR2N7488T3
130V, N-CHANNEL
REF: MIL-PRF-19500/705
5 TECHNOLOGY
™
Product Summary
Part Number
Radiation Level
IRHY57133CMSE 100K Rads (Si)
R_DS(on)
0.09Ω
ID QPL Part Number
18A* JANSR2N7488T3
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
T0-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
18*
12
A
72
75
W
0.6
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
80
18
7.5
8.0
-55 to 150
300 (0.063in./1.6mm from case for 10sec)
4.3(Typical)
V
mJ
A
mJ
V/ns
o_C
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/10/04