IRHNJ57130 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

PD - 93754E
IRHNJ57130
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level RDS(on)
IRHNJ57130 100K Rads (Si) 0.06Ω
IRHNJ53130 300K Rads (Si) 0.06Ω
IRHNJ54130 600K Rads (Si) 0.06Ω
IRHNJ58130 1000K Rads (Si) 0.075Ω
ID
22A*
22A*
22A*
22A*
JANSR2N7481U3
100V, N-CHANNEL
REF: MIL-PRF-19500/703
4# TECHNOLOGY
c
QPL Part Number
JANSR2N7481U3
JANSF2N7481U3
JANSG2N7481U3
JANSH2N7481U3
SMD-0.5
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Pre-Irradiation
Units
22*
16
A
88
75
W
0.6
W/°C
±20
V
70
mJ
22
A
7.5
mJ
1.4
V/ns
-55 to 150
o_C
300 ( for 5s )
1.0 ( Typical )
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/24/03