IRFP4310ZPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PD - 97123A
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
IRFP4310ZPbF
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
100V
4.8m:
6.0m:
I_{D (Silicon Limited)} 134A c
S ^ID (Package Limited) ^120A
D
S
D
G
TO-247AC
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
T_J
T_STG
Gate-to-Source Voltage
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
I_AR
Single Pulse Avalanche Energy e
Avalanche Current d
E_AR
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
R_θJC
R_θCS
R_θJA
Junction-to-Case j
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient j
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Max.
134c
95
120
560
280
1.9
± 20
18
-55 to + 175
300
10lbxin (1.1Nxm)
130
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.24
–––
Max.
0.54
–––
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
3/8/08