IRFB4110PBF Datasheet, PDF (1/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current d
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)} ^{Single Pulse Avalanche Energy e}
I_AR
Avalanche Current c
E_AR
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
R_θJC
Junction-to-Case k
R_θCS
Case-to-Sink, Flat Greased Surface
R_θJA
Junction-to-Ambient j
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PD - 97061A
IRFB4110PbF
HEXFET^® Power MOSFET
V_DSS
R_DS(on)
I_D
typ.
max
100V
3.7m:
4.5m:
180A
D
D
G
G
Gate
S
D
G
S
TO-220AB
D
Drain
S
Source
Max.
180c
130c
670
370
2.5
± 20
5.3
-55 to + 175
300
10lbxin (1.1Nxm)
210
75
37
Typ.
–––
0.50
–––
Max.
0.402
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
11/3/05