 English |
|
|
|
|
|
|
|
| IRF8308MTRPBF Datasheet, PDF (1/9 Pages) International Rectifier – RoHs Compliant Containing No Lead and Bromide | |||
| |||
|
PD -97671
IRF8308MPbF
IRF8308MTRPbF
l RoHs Compliant Containing No Lead and Bromide Â
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible Â
DirectFETÂ Power MOSFET Â
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V
l Ultra Low Package Inductance
l Optimized for High Frequency Switching Â
l Ideal for CPU Core DC-DC Converters
Qg tot Qgd
28nC 8.2nC
Qgs2
3.5nC
Qrr
34nC
Qoss Vgs(th)
20nC 1.8V
l Optimized for Sync. FET socket of Sync. Buck ConverterÂ
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques Â
l 100% Rg tested
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)Â
DirectFETÂ ISOMETRIC
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
e Continuous Drain Current, VGS @ 10V
e Continuous Drain Current, VGS @ 10V
f Continuous Drain Current, VGS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
Max.
30
±20
27
21
150
212
12
21
Units
V
A
mJ
A
8
12
ID = 27A
ID= 21A
10
VDS= 24V
VDS= 15V
6
8
4
TJ = 125°C
2
TJ = 25°C
0
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
 Click on this section to link to the DirectFET Website.
 Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6
4
2
0
0
20
40
60
80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 TC measured with thermocouple mounted to top (Drain) of part.
Â
Repetitive rating; pulse width limited by max. junction temperature.
 Starting TJ = 25°C, L = 0.051mH, RG = 25Ω, IAS = 21A.
1
5/4/11
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese