IRF6611TR1 Datasheet, PDF (1/10 Pages) International Rectifier – RoHS compliant containing no lead or bromide

PD - 96978E
IRF6611
DirectFET™ Power MOSFET ‚
l RoHS compliant containing no lead or bromide 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V
Q_{g tot} Q_gd Q_gs2
Q_rr
Q_oss V_gs(th)
l Optimized for High Frequency Switching above 1MHz  37nC 12nC 3.3nC 16nC 23nC 1.7V
l Ideal for CPU Core DC-DC Converters
l Optimized for SyncFET Socket of Sync. Buck Converter
l Low Conduction Losses
l Compatible with Existing Surface Mount Techniques 
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
DirectFET™ ISOMETRIC
SQ
SX
ST
MQ
MX
MT
Description
The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET^TM packaging to achieve the lowest
on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6611 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6611 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including R_DS(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6611 offers particularly low R_DS(on) and high Cdv/
dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
h Continuous Drain Current, V_GS @ 10V
h Continuous Drain Current, V_GS @ 10V
k Continuous Drain Current, V_GS @ 10V
e Pulsed Drain Current
f Single Pulse Avalanche Energy
Ãe Avalanche Current
Max.
30
±20
32
26
150
220
310
22
Units
V
A
mJ
A
20
6.0
15
ID = 27A
5.0 ^{ID= 22A}
4.0
VDS= 24V
VDS= 15V
10
3.0
5
TJ = 125°C
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
2.0
1.0
0.0
0
10
20
30
40
50
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET MOSFETs.
ƒ Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance vs. Gate Voltage
„ Starting T_J = 25°C, L = 0.91mH, R_G = 25Ω, I_AS = 22A.
† Surface mounted on 1 in. square Cu board, steady state.
‰ T_C measured with thermocouple mounted to top (Drain) of part.
1
11/17/05