AUIRF4104 Datasheet, PDF (1/15 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 97471A
AUTOMOTIVE GRADE
AUIRF4104
Features
O Low On-Resistance
O Dynamic dV/dT Rating
O 175°C Operating Temperature
O Fast Switching
O Fully Avalanche Rated
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free, RoHS Compliant
G
O Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest process-
ing techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
AUIRF4104S
HEXFET^® Power MOSFET
D V_(BR)DSS
40V
R_DS(on) typ. 4.3m_Ω
max.
I_{D (Silicon Limited)}
5.5mΩ
k 120A
S _{ID (Package Limited) 75A}
TO-220AB
AUIRF4104
D²Pak
AUIRF4104S
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
Max.
k 120
84k
Units
A
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)}
I_DM
Pulsed Drain Current
75
470
P_D @T_C = 25°C Power Dissipation
140
W
V_GS
E_AS
E_AS (tested )
I_AR
E_AR
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
g Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
0.95
± 20
120
220
See Fig.12a, 12b, 15, 16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
j Mounting Torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Parameter
R_θJC
i Junction-to-Case
R_θCS
Case-to-Sink, Flat Greased Surface
R_θJA
Junction-to-Ambient (PCB Mount)
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Typ.
Max.
–––
1.05
0.50
–––
–––
40
Note  to ‰ are on page 3
Units
°C/W
www.irf.com
1
3/29/10