RFM3N45 Datasheet, PDF (8/10 Pages) Intersil Corporation – 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs

RFM3N45, RFM3N50, RFP3N45, RFP3N50
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
3.5
3
RFM3N45, RFM3N50
2.5
RFP3N45, RFP3N50
2
1.5
1
0.5
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
T_C = 25^oC
(CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE)
10
I_D (MAX.) CONTINUOUS
1
OPERATION IN THIS
DC _OPERATION
AREA MAY BE
LIMITED BY r_DS(ON)
0.1
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
1000
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
4
V_GS = 10V
V_GS = 6V
3
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
2
V_GS = 5V
1
V_GS = 4V
0
0
5
10
15
20
25
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. SATURATION CHARACTERISTICS
4
V_DS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%
3
2
1
TC = -40^oC
TC = 25^oC
TC = 125^oC
0
0
2
4
6
8
10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. TRANSFER CHARACTERISTICS
6
V_GS = 10V
PULSE DURATION = 80µs
5 DUTY CYCLE < 2%
4
T_C = 125^oC
3
T_C = 25^oC
2
T_C = -40^oC
1
0
0
1
2
3
4
5
6
7
I_D, DRAIN CURRENT (A)
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
3