RFM3N45 Datasheet, PDF (1/10 Pages) Intersil Corporation – 3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs

Semiconductor
RFM3N45, RFM3N50, RFP3N45, RFP3N50
Data Sheet
October 1998 File Number 1384.2
[ /Title
()
/Sub-
ject ()
/Autho
r ()
/Key-
words
()
/Cre-
ator ()
/DOCI
NFO
pdf-
mark
[
/Page-
Mode
/Use-
Out-
lines
/DOC-
VIEW
pdf-
mark
3A, 450V and 500V, 3 Ohm, N-Channel
Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17405.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM3N45
TO-204AA
RFM3N45
RFM3N50
TO-204AA
RFM3N50
RFP3N45
TO-220AB
RFP3N45
RFP3N50
TO-220AB
RFP3N50
NOTE: When ordering, use the entire part number.
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
Features
• 3A, 450V and 500V
• r_DS(ON) = 3Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998