ISL71090SEH12 Datasheet, PDF (8/10 Pages) Intersil Corporation – Radiation Hardened Ultra Low Noise, Precision Voltage Reference

ISL71090SEH12
Package Characteristics
Weight of Packaged Device
0. 31 Grams (Typical)
Lid Characteristics
Finish: Gold
Potential: Connected to lead #4 (GND)
Case Isolation to Any Lead: 20 x 10⁹ Ω (min)
Die Characteristics
Die Dimensions
1464µm x 1744µm (58mils x 69mils)
Thickness: 483µm ± 25µm (19mils ± 1 mil)
Interface Materials
GLASSIVATION
Type: Nitrox
Thickness: 15kÅ
Metallization Mask Layout
TOP METALLIZATION
Type: AlCu (99.5%/0.5%)
Thickness: 30kÅ
BACKSIDE FINISH
Silicon
ASSEMBLY RELATED INFORMATION
SUBSTRATE POTENTIAL
Floating
ADDITIONAL INFORMATION
WORST CASE CURRENT DENSITY
<2 x 10⁵ A/cm²
PROCESS
Dielectrically Isolated Advanced Bipolar Technology- PR40 SOI
DNC
DNC
VS
DNC
COMP
VOUT
SENSE
GND
POWR
GND
QUIET
(see Note 13, Table 3)
8
TRIM
VOUT
FORCE
FN8452.0
June 26, 2013