ISL71090SEH12 Datasheet, PDF (1/10 Pages) Intersil Corporation – Radiation Hardened Ultra Low Noise, Precision Voltage Reference

Radiation Hardened Ultra Low Noise, Precision Voltage
Reference
ISL71090SEH12
The ISL71090SEH12 is an ultra low noise, high DC accuracy
precision voltage reference with a wide input voltage range
from 4V to 30V. The ISL71090SEH12 uses the Intersil
Advanced Bipolar technology to achieve sub 2µV_P-P noise at
0.1Hz with an accuracy over temperature and radiation of
0.15%.
The ISL71090SEH12 offers a 1.25V output voltage with
10ppm/°C temperature coefficient and also provides
excellent line and load regulation. The device is offered in an
8 Ld Flatpack package.
The ISL71090SEH12 is ideal for high-end instrumentation,
data acquisition and applications requiring high DC precision
where low noise performance is critical.
Applications
• RH voltage regulators precision outputs
• Precision voltage sources for data acquisition system for
space applications
• Strain and pressure gauge for space applications
Features
• Reference output voltage . . . . . . . . . . . . . . . . . 1.25V ±0.05%
• Accuracy over temperature and radiation . . . . . . . . . .±0.15%
• Output voltage noise . . . . . . . . . . 1µV_P-P Typ (0.1Hz to 10Hz)
• Supply current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 930µA (Typ)
• Tempco (box method) . . . . . . . . . . . . . . . . . . . 10ppm/°C Max
• Output current capability . . . . . . . . . . . . . . . . . . . . . . . . 20mA
• Line regulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8ppm/V
• Load regulation . . . . . . . . . . . . . . . . . . . . . . . . . . . 35ppm/mA
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- High dose rate (50-300rad(Si)/s) . . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 100krad(Si)*
- SET/SEL/SEB . . . . . . . . . . . . . . . . . . . . . . . . 86MeV•cm²/mg
*Product capability established by initial characterization. The
“EH” version is acceptance tested on a wafer by wafer basis to
50krad(Si) at low dose rate
• Electrically screened to SMD 5962-13211
Related Literature
• AN1862, “ISL71090SEH12 Evaluation Board User’s Guide”
• AN1863, “SEE Testing of the ISL71090SEH12”
• AN1864, “Radiation Report of the ISL71090SEH12”
ISL71090SEH12
1
DNC
8
DNC
2
7
VIN
VIN
DNC
VREF
0.1µF
3
6
COMP VOUT
4
5
1µF
GND
TRIM
C
REFIN DACOUT
VDD
VDD
D12
VEE
VEE
D0
1.1k
NOTE: Select C to minimize
settling time.
BIPOFF
GND
HS-565BRH
FIGURE 1. ISL71090SEH12 TYPICAL APPLICATION DIAGRAM
1.2530
1.2525
1.2520
1.2515
UNIT3
UNIT5
UNIT1
UNIT2
1.2510
1.2505
UNIT4
1.2500
-60 -40 -20
0 20 40 60 80 100 120
TEMPERATURE (°C)
FIGURE 2. V_OUT vs TEMPERATURE
June 26, 2013
1
FN8452.0
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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