JANSR2N7439 Datasheet, PDF (6/8 Pages) Intersil Corporation – Formerly Available As FSL923A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs

JANSR2N7439
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table)
Delta Tests and Limits (JANS) T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
Gate to Source Leakage Current
I_GSS
Zero Gate Voltage Drain Current
I_DSS
Drain to Source On Resistance
r_DS(ON)
Gate Threshold Voltage
V_GS(TH)
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
V_GS = ±20V
V_DS = 80% Rated Value
T_C = 25^oC at Rated I_D
I_D = 1.0mA
±20 (Note 7)
±25 (Note 7)
±20% (Note 8)
±20% (Note 8)
Screening Information
TEST
JANS
Gate Stress
Pind
V_GS = -30V, t = 250µs
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25^oC)
Steady State Gate
Bias (Gate Stress)
Interim Electrical Tests (Note 9)
MIL-STD-750, Method 1042, Condition B
V_GS
T_A =
= 80% of Rated Value,
150^oC, Time = 48 hours
All Delta Parameters Listed in the Delta Tests and Limits Table
Steady State Reverse
Bias (Drain Stress)
PDA
MIL-STD-750, Method 1042, Condition A
V_DS
T_A =
= 80% of Rated Value,
150^oC, Time = 240 hours
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
Safe Operating Area
SOA
V_DS = -160V, t = 10ms
0.71
Unclamped Inductive Switching
I_AS
V_GS(PEAK) = -15V, L = 0.1mH
15
Thermal Response
∆V_SD
t_H = 10ms; V_H = -25V; I_H = 1A
60
Thermal Impedance
∆V_SD
t_H = 500ms; V_H = -25V; I_H = 1A
230
UNITS
nA
µA
Ω
V
UNITS
A
A
mV
mV
4-6