JANSR2N7439 Datasheet, PDF (1/8 Pages) Intersil Corporation – Formerly Available As FSL923A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs

Data Sheet
JANSR2N7439
January 1999
File Number 4639
Formerly Available As FSL923A0R4,
Radiation Hardened, SEGR Resistant,
P-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’ home page:
http://www.semi.intersil.com. Contact your local Intersil
Sales Office for additional information.
Ordering Information
PART NUMBER
PACKAGE
JANSR2N7439
TO-205AF
BRAND
JANSR2N7439
Die Family TA17797.
MIL-PRF-19500/658.
Features
• 5A, -200V, r_DS(ON) = 0.670Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm² with
V_DS up to 80% of Rated Breakdown and
V_GS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV_DSS
- Typically Survives 2E12 if Current Limited to I_DM
• Photo Current
- 3.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm²
- Usable to 1E14 Neutrons/cm²
Symbol
D
G
S
Packaging
TO-205AF
DG S
4-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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