English
Language : 

ISL6612A_14 Datasheet, PDF (6/12 Pages) Intersil Corporation – Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
ISL6612A, ISL6613A
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
(Note 8) TYP (Note 8) UNITS
Three-State Upper Gate Falling Threshold
VCC = 12V
-
2.60
-
V
Shutdown Holdoff Time
UGATE Rise Time
LGATE Rise Time
UGATE Fall Time
LGATE Fall Time
UGATE Turn-On Propagation Delay (Note 7)
LGATE Turn-On Propagation Delay (Note 7)
UGATE Turn-Off Propagation Delay (Note 7)
LGATE Turn-Off Propagation Delay (Note 7)
LG/UG Three-State Propagation Delay (Note 7)
OUTPUT (Note 7)
tTSSHD
tRU
tRL
tFU
tFL
tPDHU
tPDHL
tPDLU
tPDLL
tPDTS
VPVCC = 12V, 3nF Load, 10% to 90%
VPVCC = 12V, 3nF Load, 10% to 90%
VPVCC = 12V, 3nF Load, 90% to 10%
VPVCC = 12V, 3nF Load, 90% to 10%
VPVCC = 12V, 3nF Load, Adaptive
VPVCC = 12V, 3nF Load, Adaptive
VPVCC = 12V, 3nF Load
VPVCC = 12V, 3nF Load
VPVCC = 12V, 3nF Load
-
245
-
ns
-
26
-
ns
-
18
-
ns
-
18
-
ns
-
12
-
ns
-
10
-
ns
-
10
-
ns
-
10
-
ns
-
10
-
ns
-
10
-
ns
Upper Drive Source Current
IU_SOURCE VPVCC = 12V, 3nF Load
-
1.25
-
A
Upper Drive Source Impedance
RU_SOURCE 150mA Source Current
1.25
2.0
3.0
Ω
Upper Drive Sink Current
IU_SINK VPVCC = 12V, 3nF Load
-
2
-
A
Upper Drive Transition Sink Impedance
RU_SINK_TR 70ns With Respect To PWM Falling
-
1.3
2.2
Ω
Upper Drive DC Sink Impedance
RU_SINK_DC 150mA Source Current
0.9 1.65 3.0
Ω
Lower Drive Source Current
IL_SOURCE VPVCC = 12V, 3nF Load
-
2
-
A
Lower Drive Source Impedance
RL_SOURCE 150mA Source Current
0.85 1.25 2.2
Ω
Lower Drive Sink Current
IL_SINK VPVCC = 12V, 3nF Load
-
3
-
A
Lower Drive Sink Impedance
RL_SINK 150mA Sink Current
0.60 0.80 1.35
Ω
NOTES:
7. Limits should be considered typical and are not production tested.
8. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
Functional Pin Description
PACKAGE PIN # PIN
SOIC DFN SYMBOL
FUNCTION
1
1 UGATE Upper gate drive output. Connect to gate of high-side power N-Channel MOSFET.
2
2
BOOT Floating bootstrap supply pin for the upper gate drive. Connect the bootstrap capacitor between this pin and the
PHASE pin. The bootstrap capacitor provides the charge to turn on the upper MOSFET. See “Internal Bootstrap
Device” on page 8 for guidance in choosing the capacitor value.
-
3, 8
N/C No Connection.
3
4
PWM The PWM signal is the control input for the driver. The PWM signal can enter three distinct states during operation, See
“Three-State PWM Input” on page 7 for further details. Connect this pin to the PWM output of the controller.
4
5
GND Bias and reference ground. All signals are referenced to this node. It is also the power ground return of the driver.
5
6 LGATE Lower gate drive output. Connect to gate of the low-side power N-Channel MOSFET.
6
7
VCC Connect this pin to a +12V bias supply. Place a high quality low ESR ceramic capacitor from this pin to GND.
7
9
PVCC This pin supplies power to both upper and lower gate drives in ISL6613A; only the lower gate drive in ISL6612A. Its
operating range is +5V to 12V. Place a high quality low ESR ceramic capacitor from this pin to GND.
8
10 PHASE Connect this pin to the SOURCE of the upper MOSFET and the DRAIN of the lower MOSFET. This pin provides a
return path for the upper gate drive.
9
11
PAD Connect this pad to the power ground plane (GND) via thermally enhanced connection.
6
FN9159.7
May 1, 2012