FSYC9160D Datasheet, PDF (6/8 Pages) Intersil Corporation – Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

FSYC9160D, FSYC9160R
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
UNITS
Gate to Source Leakage Current
I_GSS
Zero Gate Voltage Drain Current
I_DSS
Drain to Source On Resistance
r_DS(ON)
Gate Threshold Voltage
V_GS(TH)
NOTES:
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
V_GS = ±20V
V_DS = 80% Rated Value
T_C = 25^oC at Rated I_D
I_D = 1.0mA
±20 (Note 7)
nA
±25 (Note 7)
µA
±20% (Note 8)
Ω
±20% (Note 8)
V
Screening Information
TEST
JANTXV EQUIVALENT
JANS EQUIVALENT
Gate Stress
Pind
V_GS = -30V, t = 250µs
Optional
V_GS = -30V, t = 250µs
Required
Pre Burn-In Tests (Note 9)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25^oC)
MIL-S-19500 Group A,
Subgroup 2 (All Static Tests at 25^oC)
Steady State Gate
Bias (Gate Stress)
Interim Electrical Tests (Note 9)
MIL-STD-750, Method 1042, Condition B
V_GS
T_A =
= 80% of Rated Value,
150^oC, Time = 48 hours
MIL-STD-750, Method 1042, Condition B
V_GS
T_A =
= 80% of Rated Value,
150^oC, Time = 48 hours
All Delta Parameters Listed in the Delta Tests All Delta Parameters Listed in the Delta Tests
and Limits Table
and Limits Table
Steady State Reverse
Bias (Drain Stress)
PDA
MIL-STD-750, Method 1042, Condition A
V_DS
T_A =
= 80% of Rated Value,
150^oC, Time = 160 hours
10%
MIL-STD-750, Method 1042, Condition A
V_DS
T_A =
= 80% of Rated Value,
150^oC, Time = 240 hours
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
Safe Operating Area
Unclamped Inductive Switching
Thermal Response
Thermal Impedance
SYMBOL
SOA
I_AS
∆V_SD
∆V_SD
TEST CONDITIONS
V_DS = -80V, t = 10ms
V_GS(PEAK) = -15V, L = 0.1mH
t_H = 10ms; V_H = -25V; I_H = 4A
t_H = 500ms; V_H = -20V; I_H = 4A
(HEATSINK REQUIRED)
MAX
5.5
141
55
115
UNITS
A
A
mV
mV
6