FSYC9160D Datasheet, PDF (4/8 Pages) Intersil Corporation – Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

FSYC9160D, FSYC9160R
Typical Performance Curves Unless Otherwise Specified (Continued)
500
60
100
40
T_C = 25^oC
100µs
20
0
-50
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
10ms
1
-1
-10
-100
-300
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-12V
Q_GS
V_G
Q_G
Q_GD
CHARGE
BASIC GATE CHARGE WAVEFORM
FIGURE 5. BASIC GATE CHARGE WAVEFORM
2.5
PULSE DURATION = 250ms, V_GS = -12V, I_D = 30A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 6. NORMALIZED r_DS(ON) vs JUNCTION TEMPERATURE
10
1
0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
0.001
10^-5
SINGLE PULSE
10^-4
10^-3
P_DM
NOTES:
DUTY FACTOR: D = t₁/t₂
t₁
PEAK T_J = P_DM x Z_θJC + T_C
t₂
10^-2
10^-1
10⁰
10¹
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
4