CD4076BMS Datasheet, PDF (6/9 Pages) Intersil Corporation – CMOS 4 -Bit D-Type Registers

Specifications CD4076BMS
CONFORMANCE GROUPS
Group E Subgroup 2
TABLE 7. TOTAL DOSE IRRADIATION
MIL-STD-883
METHOD
TEST
PRE-IRRAD
POST-IRRAD
5005
1, 7, 9
Table 4
READ AND RECORD
PRE-IRRAD
POST-IRRAD
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
OPEN
GROUND
VDD
9V ± -0.5V
50kHz
25kHz
Static Burn-In 1 Note 1
3-6
1, 2, 7 - 15
16
Static Burn-In 2 Note 1
3-6
8
1, 2, 7, 9 -16
Dynamic Burn-In Note 1
-
1, 2, 8 - 10, 15
16
3-6
7
11 - 14
Irradiation (Note 2)
3-6
8
1, 2, 7, 9 - 16
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V
M1
*
OUTPUT
DISABLE
N2
*
DATA
*
1 ¹⁴
DATA
*
G1 9
INPUT
DISABLE _{G2 10}
*
DATA
*
2 ¹³
*
CLOCK 7
DQ
CL Q
R
DQ
CL Q
R
16 VDD
3 Q1
4 Q2
DATA
3
*
12
* ALL INPUTS PROTECTED BY
CMOS PROTECTION NETWORK
VDD
DATA
*
4 ¹¹
*
VSS
RESET 15
FIGURE 1. CD4076BMS LOGIC DIAGRAM
DQ
CL Q
R
DQ
CL Q
R
5 Q3
6 Q4
8 VSS
7-1034