IRF9620 Datasheet, PDF (5/7 Pages) Intersil Corporation – 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET

IRF9620
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
I_D = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
500
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
400
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
300
C_ISS
200
C_OSS
100
C_RSS
0
0
10
20
30
40
50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.2
2.4
1.6
T_J = -55^oC
T_J = 25^oC
T_J = 125^oC
0.8
0
0
-1
-2
-3
-4
-5
I _D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-10
T_J = 150^oC
-1.0
T_J = 25^oC
-0.1
-0.4 -0.6 -0.8
-1.0
-1.2 -1.4
-1.6 -1.8
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
I_D = -3.5A
-5
V_DS = -60V
V_DS = -40V
-10
V_DS = -100V
0
4
8
12
16
20
Q_g(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-25