IRF9620 Datasheet, PDF (3/7 Pages) Intersil Corporation – 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET

IRF9620
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
I_SD
I_SDM
Modified MOSFET Sym-
bol Showing the Integral
Reverse
P-N Junction Diode
G
-
-
-3.5
A
D
-
-
-14
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
V_SD
T_C = 25^oC, I_SD = -3.5A, V_GS = 0V (Figure 13)
-
t_rr
T_J = 150^oC, I_SD = -3.5A, dI_SD/dt = 100A/µs
-
Q_RR
T_J = 150^oC, I_SD = -3.5A, dI_SD/dt = 100A/µs
-
-
-1.5
V
300
-
ns
1.9
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V_DD = 50V, starting T_J = 25^oC, L = 35.5mH, R_G = 25Ω, peak I_AS = 3.5A (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-5
-4
-3
-2
-1
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10^-5
10^-4
P_DM
NOTES:
t₁
t₂
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC x R_θJC + T_C
10^-3
10^-2
10^-1
1
10
t₁, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-23