IRF9230 Datasheet, PDF (5/7 Pages) Seme LAB – P-CHANNEL POWER MOSFET

IRF9230, IRF9231, IRF9232, IRF9233
Typical Performance Curves Unless Otherwise Specified (Continued)
-15
80µsPULSE TEST
-12
-9
-6
V_GS = -10V
V_GS = -9V
V_GS = -8V
V_GS = -7V
V_GS = -6V
-15
80µs PULSE TEST
V_DS ≥ I _D(ON) x r_DS(ON) MAX
-12
T_J = 125^oC
-9
T_J = 25^oC
T_J = -55^oC
-6
-3
V_GS = -5V
V_GS = -4V
0
0
-2
-4
-6
-8
-10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
-3
0
0
-2
-4
-6
-8
-10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.0
2.0µs PULSE TEST
1.6
2.5
V_GS = -10V, I_D = -2.0A
2.0
1.2
1.5
V_GS = - 10V
0.8
1.0
V_GS = - 20V
0.4
0.5
0
0
-5
-10
-15
-20
-25
I_D, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.25
I_D = 250µA
1.15
1.05
0
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2000
1600
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
1200
0.95
800
C_ISS
0.85
0.75
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
400
C_RSS
C_OSS
00
-10
-20
-30
-40
-50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
6-5